JPS60207375A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS60207375A JPS60207375A JP59064577A JP6457784A JPS60207375A JP S60207375 A JPS60207375 A JP S60207375A JP 59064577 A JP59064577 A JP 59064577A JP 6457784 A JP6457784 A JP 6457784A JP S60207375 A JPS60207375 A JP S60207375A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- film
- silicon film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 2
- FBOUIAKEJMZPQG-AWNIVKPZSA-N (1E)-1-(2,4-dichlorophenyl)-4,4-dimethyl-2-(1,2,4-triazol-1-yl)pent-1-en-3-ol Chemical compound C1=NC=NN1/C(C(O)C(C)(C)C)=C/C1=CC=C(Cl)C=C1Cl FBOUIAKEJMZPQG-AWNIVKPZSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 abstract description 31
- 229910021332 silicide Inorganic materials 0.000 abstract description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 14
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 59
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000010953 base metal Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59064577A JPS60207375A (ja) | 1984-03-30 | 1984-03-30 | 半導体装置の製造方法 |
| US06/698,523 US4665424A (en) | 1984-03-30 | 1985-02-05 | Semiconductor device |
| GB08508243A GB2157079B (en) | 1984-03-30 | 1985-03-29 | Electrode arrangement for semiconductor devices |
| US06/940,607 US4709469A (en) | 1984-03-30 | 1986-12-11 | Method of making a bipolar transistor with polycrystalline contacts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59064577A JPS60207375A (ja) | 1984-03-30 | 1984-03-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60207375A true JPS60207375A (ja) | 1985-10-18 |
| JPH0318738B2 JPH0318738B2 (en]) | 1991-03-13 |
Family
ID=13262222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59064577A Granted JPS60207375A (ja) | 1984-03-30 | 1984-03-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60207375A (en]) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6269517A (ja) * | 1985-09-21 | 1987-03-30 | ドイチエ・アイテイ−テイ−・インダストリ−ズ・ゲゼルシヤフト・ミト・ベシユレンクタ・ハフツンク | 半導体基板のコンタクト領域にコンタクトを取付ける方法 |
| JPS62114268A (ja) * | 1985-11-13 | 1987-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS63114261A (ja) * | 1986-09-11 | 1988-05-19 | フェアチャイルド セミコンダクタ コーポレーション | トランジスタ用の自己整合型ベース分路 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5563821A (en) * | 1978-11-06 | 1980-05-14 | Nec Corp | Semiconductor device |
| JPS5928378A (ja) * | 1982-08-09 | 1984-02-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS5928377A (ja) * | 1982-08-09 | 1984-02-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS645472A (en) * | 1987-06-30 | 1989-01-10 | Snow Brand Milk Products Co Ltd | Production of nutritive food |
-
1984
- 1984-03-30 JP JP59064577A patent/JPS60207375A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5563821A (en) * | 1978-11-06 | 1980-05-14 | Nec Corp | Semiconductor device |
| JPS5928378A (ja) * | 1982-08-09 | 1984-02-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS5928377A (ja) * | 1982-08-09 | 1984-02-15 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS645472A (en) * | 1987-06-30 | 1989-01-10 | Snow Brand Milk Products Co Ltd | Production of nutritive food |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6269517A (ja) * | 1985-09-21 | 1987-03-30 | ドイチエ・アイテイ−テイ−・インダストリ−ズ・ゲゼルシヤフト・ミト・ベシユレンクタ・ハフツンク | 半導体基板のコンタクト領域にコンタクトを取付ける方法 |
| JPS62114268A (ja) * | 1985-11-13 | 1987-05-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS63114261A (ja) * | 1986-09-11 | 1988-05-19 | フェアチャイルド セミコンダクタ コーポレーション | トランジスタ用の自己整合型ベース分路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0318738B2 (en]) | 1991-03-13 |
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